型号:

MMUN2214LT1G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANS BRT NPN 100MA 50V SOT-23
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路﹐预偏压式
MMUN2214LT1G PDF
产品变化通告 Wire Change 14/Oct/2008
Possible Adhesion Issue 11/July/2008
产品目录绘图 Transistor SOT-23-3 Pkg
标准包装 3,000
系列 -
晶体管类型 NPN - 预偏压
电流 - 集电极 (Ic)(最大) 100mA
电压 - 集电极发射极击穿(最大) 50V
电阻器 - 基极 (R1)(欧) 10k
电阻器 - 发射极 (R2)(欧) 47k
在某 Ic、Vce 时的最小直流电流增益 (hFE) 80 @ 5mA,10V
Ib、Ic条件下的Vce饱和度(最大) 250mV @ 300µA,10mA
电流 - 集电极截止(最大) 500nA
频率 - 转换 -
功率 - 最大 246mW
安装类型 表面贴装
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 SOT-23-3(TO-236)
包装 带卷 (TR)
产品目录页面 1562 (CN2011-ZH PDF)
其它名称 MMUN2214LT1G-ND
MMUN2214LT1GOSTR
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